1999. 6. 24 1/2 semiconductor technical data KTD2161 epitaxial planar npn transistor revision no : 1 high voltage application tv, monitor vertical output application driver stage application coror tv class b sound output application features high breakdown voltage : v ceo =180v(min.) high transition frequency : f t =100mhz(typ.) high current : i c(max) =2a complementary to ktb1469. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector (heat sink) 3. emitter to-220ab 10.30 max 15.30 max 0.80 3.60 0.20 3.00 6.70 max 13.60 0.50 5.60 max 0.50 1.50 max 2.54 4.70 max 2.60 a b c d e f g h j k l m n o p a e mm 123 f b g h l c k j o n p d 1.37 max 1.50 max r s q c t q1.50 r 9.50 0.20 s 8.00 0.20 t 2.90 max + _ + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 200 v collector-emitter voltage v ceo 180 v emitter-base voltage v ebo 5 v collector current i c 2 a base current i b 0.2 a collector power dissipation (tc=25 1 ) p c 25 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =200v, i e =0 - - 1.0 a emitter cut-off current i ebo v eb =5v, i c =0 - - 1.0 a collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 180 - - v dc current gain h fe v ce =10v, i c =400ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma - - 1.0 v base-emitter voltage v be v ce =5v, i c =500ma - - 1.0 v transition frequency f t v ce =10v, i c =400ma - 100 - mhz note : h fe classification o:70~140, y:120~240
1999. 6. 24 2/2 KTD2161 revision no : 1 collecotr current i (a) c collector-emitter voltage v (v) ce ce c i - v collector power dissipation p (w) 0 c 0 case temperature ta ( c) pc - ta 10 dc current gain h fe 0.3 0.1 0.03 0.01 collector current i (a) c h - i v ,v - i c collector current i (a) be(sat) saturation voltage v ,v (v) collector current i (a) 5 collector-emitter voltage v (v) 10 30 100 ce c 0.1 safe operating area fe c 1310 30 50 100 300 500 1k v =10v ce ce(sat) be(sat) c ce(sat) 50 300 0.3 0.5 1 3 5 10 nonrepetitive pulse tc=25 c curves must be derated unearly with increase in temperature single s/b limitation * t hermal l im it ation s/b limit ation dc 1ms * 50 100 150 10 20 30 40 0 0 0.01 0.03 0.1 0.3 0.01 10 20 30 40 50 0.2 0.4 0.6 0.8 1.0 i =8ma b i =7ma b i =6ma b i =5ma b i =4ma b i =3ma b i =2ma b i =1ma b 1310 0.03 0.05 0.1 0.3 0.5 1 3 5 10 v be(sat) ce(sat) v i =10i c b
|
